MIT researchers Steve Ramirez and Xu Liu recently made history when they successfully implanted a false memory into the mind of a mouse. The proof was a simple reaction from the rodent, but the implications are vast. They placed the furry little creature inside a metal box, and it froze, displaying a distinct fear response. The mouse was reacting as if it had received an electrical shock there, when it hadn’t at all.
What makes it more riveting is that their success was considered a long-shot. The hypothesis was that not only could they identify those neurons associated with encoding memory, but could essentially rewrite one. Experts say that this an impressive feat which helps uncover more of the mystery of how memory operates. Though neuroscientists have considered such a possibility for years, they never thought this kind of experiment could actually work.
This breakthrough was possible due to research out of Oxford which discovered exactly how short-term memories are transferred into long term memory. But the MIT researchers took it into an entirely new direction. Memories are actually stored in not one area, but certain groups of neurons known as engrams. Ramirez and Liu came together in 2010 and designed a new method for exploring live brains, to identify specific engrams. The neuroscientists used a newly minted technique called optogenetics, which employs lasers to stimulate genetically engineered cells designed to react to them. (Read more from “Scientists Have Discovered How to Implant False Memories” HERE)